Forward voltage drop of fast p+nn+ structure is affected strongly by the high-level carrier lifetime, reverse recovery time current by the low-level carrier lifetime, and reverse current by the space-charge generation lifetime. These 3 carrier lifetimes influence 3 main parameters of p+nn+ structure differently. When the low-level carrier lifetime is decreased in order to decrease the reverse recovery time, the forward voltage drop increases, and when the high-level carrier lifetime is increased for reducing the forward voltage drop, the reverse recovery time increases.
It is unknown how to adjust rationally the 3 main parameters of fast p+nn+ structure － forward voltage drop, reverse recovery time and reverse current.
In order to control these conflicting relations, Pak Pyong Su, a section head at the Semiconductor Institute, has illuminated the recombination center level formed on the basic floor of p+nn+ structure. Then, to determine the recombination center level coincided with the practical recombination center level, he has suggested an analytic method of determining the recombination center level formed by 2 carrier lifetime regulation sources.
First, he suggested main relative equations to determine the optimal recombination center level with numerical solutions. Second, he found the practical recombination center level which is irrelevant to the doping agent concentration and working temperature. Finally, he proposed an analytic method to determine the co-additive recombination center level coincident with the practical recombination center level by adding any 2 types of carrier lifetime regulation sources.
To illustrate the effectiveness, he used an analytic method to calculate the recombination center level formed in the silicon semiconductor material with addition of gold and iridium at the same time.
The proposed method demonstrates that it is effective in the determination of the co-additive recombination center level when any 2 carrier lifetime control sources are added and that it can be applied to the rational regulation of the 3 parameters of a fast diode in the random doping agent kinds and co-additive concentration and the other intervals of working temperature.
The details of this are found in his paper “Analysis of the optimal recombination center level to adjust rationally the 3 main parameters of p+nn+ structure” in the EI Journal “Journal of Power Electronics and Devices”.
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