A lot of convex corner compensation methods of V-grooves structure thin membranes of a semiconductor pressure sensor have been introduced, but they still make it difficult to make thin membranes with square mass. In order to make silicon thin membranes in different thicknesses with compensated stress, thin corner compensation method for preserving the square shape have to be developed.
Yu Nam Chol, a researcher at the Science Engineering Institute, has designed a convex corner compensation pattern to make V-grooves structures thin membranes and proved the superiority of this method by means of the final analytical results.
His method ensured the membrane thickness of mass structure close to a right-angled pattern by combining several compensation patterns from 10㎛ to 20㎛. He made a membrane with mass whose a/h is less than 3.72 and b/h is less than 3.33, by applying corner compensation patterns.
You can find the details of this in his paper “A Compensating method of Convex Corner in Etching of (110) Si” in “Microsystem Technology” (SCI).
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